top of page


The research philosophy of DIIL is explained.

               studies local electron transport properties across microstructural defects in alloys and across internal interfaces between alloys.

The research strategy is:

  • In DIIL we grow bulk and thin film materials in a well-controlled manner to tune defects' structures.

  • In DIIL we structurally characterize the defects.

  • In DIIL we study the local electrical and mechanical properties of individual defects and internal interfaces' segments.

  • In DIIL we continuously develop the methodologies for local electrical characterization.

  • In DIIL we develop novel defect-design concepts.



  • We prepare bulk alloys. Microstructure is tuned through chemistry, solidification and annealing.

  • We prepare thin films alloys. Microstructure is tuned through controlling multilayer co-sputtering and annealing processes.

  • We Investigate the microstructure evolution (mainly) by: XRD, SEM, EBSD, EDS, TEM.

  • We create internal interfaces by diffusion bonding.

  • We Investigate the local electrical properties by SEM in-situ local electrical measurements assisted by nanomanipulator systems.

  • We investigate the global electrical properties of alloys.

  • We develop the electrical measurements methodology by utilizing finite elements simulations using COMSOL Multiphysics.

  • We investigate the local mechanical properties of defects.

  • We interconnect the microstructure and physical properties of defects.

Related publications:

  • H. Bishara, S. Lee, T. Brink, M. Ghidelli, G. Dehm: Understanding grain boundary electrical resistivity in Cu: the effect of boundary structure. ACS Nano 15 (10), 16607-16615 (2021).

  • H. Bishara, M. Ghidelli, G. Dehm: Approaches to measure the resistivity of grain boundaries in metals with high sensitivity and spatial resolution: a case study employing Cu. ACS Applied Electronic Materials 2 (7), 2049-2056 (2020).

  • T. Luo, F. Serrano-Sánchez, H. Bishara, S. Zhang, R. Bueno Villoro, J.J. Kuo, C. Felser, C. Scheu, G. J. Snyder, J. P. Best, G. Dehm, Y. Yu, D. Raabe, C. Fu, B. Gault: Dopant-segregation to grain boundaries controls electrical conductivity of n-type NbCo (Pt) Sn half-Heusler alloy mediating thermoelectric performance. Acta Materialia, 117147 (2021).

  • H. Bishara, H. Tsybenko, S. Nandy, Q.K. Muhammad, T. Frömling, X. Fang, J.P. Best, G. Dehm: Dislocation-enhanced electrical conductivity in rutile TiO2 accessed by nano-mechanical doping. Scripta Materialia, 212, 114543 (2022).



Examples of SEM in-situ electrical measurements of metallic and alloy systems. Images taken from the abovementioned references. 

bottom of page